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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 臺大學術典藏 |
2021-01-18T09:12:12Z |
Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K
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Cheng, Hao Tien; CHENG-HAN WU; Fu, Wenning; Wang, Hsiao Lun; Feng, Milton; CHAO-HSIN WU |
| 國立交通大學 |
2019-08-02T02:24:20Z |
VCSEL with bi-layer oxidized aperture enables 140-Gbit/s OFDM Transmission over 100-m-long OM5 MMF
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Wu, Wei-Li; Huang, Cheng-Yi; Wang, Huai-Yung; Lin, Yu-Hong; Wu, Cheng-Han; Kuo, Hao-Chung; Cheng, Wood-Hi; Wu, Chao-Hsin; Feng, Milton; Lin, Gong-Ru |
| 國立交通大學 |
2019-04-03T06:47:21Z |
Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
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Liao, Yu-Sheng; Lin, Gong-Ru; Kuo, Hao-Chung; Feng, Milton |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts
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Liao, Chichih;Cheng, Donald;Cheng, Chienchia;Cheng, KY;Feng, Milton;Chiang, TH;Kwo, J;Hong, M; Liao, Chichih; Cheng, Donald; Cheng, Chienchia; Cheng, KY; Feng, Milton; Chiang, TH; Kwo, J; Hong, M; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:24:43Z |
Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190L
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Liao, Yu-Sheng; Lin, Gong-Ru; Kuo, Hao-Chung; Feng, Milton |
| 國立臺灣大學 |
2006 |
10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate
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Liao, Yu-Sheng; Lin, Gong-Ru; Kuo, Hao-Chung; Feng, Kai-Ming; Feng, Milton |
| 臺大學術典藏 |
2006 |
10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate
|
Liao, Yu-Sheng; Lin, Gong-Ru; Kuo, Hao-Chung; Feng, Kai-Ming; Feng, Milton; Liao, Yu-Sheng; Lin, Gong-Ru; Kuo, Hao-Chung; Feng, Kai-Ming; Feng, Milton |
Showing items 1-7 of 7 (1 Page(s) Totally)
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