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"feng ms"
Showing items 11-20 of 118 (12 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:48Z |
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
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Wang, YL; Tseng, WT; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:40Z |
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
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Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
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Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Growth of MgWO4 phosphor by RF magnetron sputtering
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Chu, JP; Hsieh, IJ; Chen, JT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:47:22Z |
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:44Z |
Optimization of multilayer thin film passivation processes for improving cache memory device performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:40Z |
Process optimization and integration for silicon oxide intermetal dielectric planarized by chemical mechanical polish
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:28Z |
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
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Lin, CF; Tseng, WT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide
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Chen, YC; Yang, MZ; Tung, IC; Chen, MP; Feng, MS; Cheng, HC; Chang, CY |
Showing items 11-20 of 118 (12 Page(s) Totally)
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