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Taiwan Academic Institutional Repository >
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"feng ms"
Showing items 106-115 of 118 (12 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:02:31Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
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Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
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Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:58Z |
Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films
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Tseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:57Z |
Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures
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Tsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:46Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
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Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
| 國立交通大學 |
2014-12-08T15:01:36Z |
Persistent photoconductivity in n-type GaN
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Chen, HM; Chen, YF; Lee, MC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:30Z |
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
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Wang, YL; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:28Z |
Growth and characterizations of GaN on SiC substrates with buffer layers
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Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
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Wang, YL; Liu, C; Feng, MS; Dun, JW; Chou, KS |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
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Wang, YL; Liu, C; Chang, ST; Tsai, MS; Feng, MS; Tseng, WT |
Showing items 106-115 of 118 (12 Page(s) Totally)
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