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Taiwan Academic Institutional Repository >
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"feng ms"
Showing items 31-55 of 118 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:47Z |
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
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Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
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Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:28Z |
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:19Z |
Reduction of resistivity of electroplated copper by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:17Z |
A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
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Fang, CY; Lin, CF; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:42:09Z |
Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
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Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:01Z |
The effect of plating current densities on self-annealing Behaviors of electroplated copper films
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:42:00Z |
Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
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Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Li, YH; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:49Z |
Leveling effects of copper electrolytes with hybrid-mode additives
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:41:48Z |
Investigation of carrying agents on microstructure of electroplated Cu films
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Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Investigations of pulse current electrodeposition for damascene copper metals
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Pattern effects on planarization efficiency of Cu electropolishing
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Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Improving the quality of electroplated copper films by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:41:08Z |
Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si
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Chao, CW; Wu, YCS; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations
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Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:24Z |
Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni
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Chao, CW; Wu, YCS; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:06Z |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
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Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Roles of copper mechanical characteristics in electropolishing
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Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
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Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
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Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
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Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
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Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
Showing items 31-55 of 118 (5 Page(s) Totally)
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