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Showing items 36-60 of 118  (5 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:42:14Z Wetting effect on gap filling submicron damascene by an electrolyte free of levelers Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP
國立交通大學 2014-12-08T15:42:09Z Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization Shieh, JM; Chang, SC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:42:01Z The effect of plating current densities on self-annealing Behaviors of electroplated copper films Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH
國立交通大學 2014-12-08T15:42:00Z Microleveling mechanisms and applications of electropolishing on planarization of copper metallization Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Li, YH; Feng, MS
國立交通大學 2014-12-08T15:41:49Z Leveling effects of copper electrolytes with hybrid-mode additives Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH
國立交通大學 2014-12-08T15:41:48Z Investigation of carrying agents on microstructure of electroplated Cu films Shieh, JM; Chang, SC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:41:47Z Investigations of pulse current electrodeposition for damascene copper metals Chang, SC; Shieh, JM; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:41:39Z Pattern effects on planarization efficiency of Cu electropolishing Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:41:17Z Improving the quality of electroplated copper films by rapid thermal annealing Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL
國立交通大學 2014-12-08T15:41:08Z Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si Chao, CW; Wu, YCS; Hu, GR; Feng, MS
國立交通大學 2014-12-08T15:40:54Z Superpolishing for planarizing copper damascene interconnects Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL
國立交通大學 2014-12-08T15:40:39Z Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS
國立交通大學 2014-12-08T15:40:24Z Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni Chao, CW; Wu, YCS; Hu, GR; Feng, MS
國立交通大學 2014-12-08T15:40:06Z The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT
國立交通大學 2014-12-08T15:39:57Z Roles of copper mechanical characteristics in electropolishing Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:39:44Z Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:43Z Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:16Z Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS
國立交通大學 2014-12-08T15:38:56Z Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS
國立交通大學 2014-12-08T15:37:09Z Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS
國立交通大學 2014-12-08T15:36:01Z Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS
國立交通大學 2014-12-08T15:27:44Z Study of Schottky barriers on n-type GaN grown by LP-MOCVD Guo, JD; Feng, MS; Pan, FM
國立交通大學 2014-12-08T15:27:44Z Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors Tai, YH; Su, FC; Feng, MS; Cheng, HC
國立交通大學 2014-12-08T15:27:43Z Fabrication and characterization of the Pd-silicided emitters for field-emission devices Wang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC
國立交通大學 2014-12-08T15:27:24Z Modified double-layer PECVD passivation films for improving nonvolatile memory IC performance Lin, CF; Tseng, WT; Feng, MS; Chang, YF

Showing items 36-60 of 118  (5 Page(s) Totally)
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