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"feng ms"的相关文件
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| 國立交通大學 |
2019-04-03T06:38:43Z |
Yellow luminescence in n-type GaN epitaxial films
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Chen, HM; Chen, YF; Lee, MC; Feng, MS |
| 國立交通大學 |
2019-04-02T06:04:36Z |
Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin film transistors
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Liang, CW; Chiang, WC; Feng, MS |
| 國立交通大學 |
2019-04-02T06:00:00Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
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Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
| 國立交通大學 |
2019-04-02T05:59:32Z |
Growth and characterizations of GaN on SiC substrates with buffer layers
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Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY |
| 國立交通大學 |
2019-04-02T05:59:26Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2019-04-02T05:59:24Z |
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM |
| 國立交通大學 |
2019-04-02T05:59:22Z |
The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
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Wang, YL; Liu, C; Feng, MS; Tseng, WT |
| 國立交通大學 |
2019-04-02T05:59:14Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2019-04-02T05:59:14Z |
A modified multi-chemicals spray cleaning process for post-CMP cleaning application
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Wang, YL; Liu, C; Feng, MS; Tseng, WT |
| 國立交通大學 |
2019-04-02T05:59:13Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
| 國立交通大學 |
2019-04-02T05:58:48Z |
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
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Wang, YL; Tseng, WT; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:40Z |
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
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Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
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Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Growth of MgWO4 phosphor by RF magnetron sputtering
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Chu, JP; Hsieh, IJ; Chen, JT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:47:22Z |
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:44Z |
Optimization of multilayer thin film passivation processes for improving cache memory device performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:40Z |
Process optimization and integration for silicon oxide intermetal dielectric planarized by chemical mechanical polish
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:28Z |
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
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Lin, CF; Tseng, WT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide
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Chen, YC; Yang, MZ; Tung, IC; Chen, MP; Feng, MS; Cheng, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:11Z |
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
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Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:08Z |
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
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Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:07Z |
Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memory
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Lin, CF; Tung, IC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:45:24Z |
Improved contact performance of GaN film using Si diffusion
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Lin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS |
| 國立交通大學 |
2014-12-08T15:44:44Z |
Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition
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Chen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC |
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