|
"feng ms"的相关文件
显示项目 26-35 / 118 (共12页) << < 1 2 3 4 5 6 7 8 9 10 > >> 每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:44:34Z |
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
|
Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:54Z |
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
|
Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:39Z |
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
|
Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:22Z |
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
|
Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films
|
Chao, CW; Hu, GR; Wu, YS; Chen, YC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:47Z |
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
|
Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
|
Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:28Z |
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
|
Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:19Z |
Reduction of resistivity of electroplated copper by rapid thermal annealing
|
Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:17Z |
A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
|
Fang, CY; Lin, CF; Chang, EY; Feng, MS |
显示项目 26-35 / 118 (共12页) << < 1 2 3 4 5 6 7 8 9 10 > >> 每页显示[10|25|50]项目
|