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机构 日期 题名 作者
國立交通大學 2014-12-08T15:44:34Z Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS
國立交通大學 2014-12-08T15:43:54Z Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP
國立交通大學 2014-12-08T15:43:39Z Selective copper metallization by electrochemical contact displacement with amorphous silicon film Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:43:22Z X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG
國立交通大學 2014-12-08T15:42:48Z Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films Chao, CW; Hu, GR; Wu, YS; Chen, YC; Feng, MS
國立交通大學 2014-12-08T15:42:47Z Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC
國立交通大學 2014-12-08T15:42:45Z The removal selectivity of titanium and aluminum in chemical mechanical planarization Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC
國立交通大學 2014-12-08T15:42:28Z Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS
國立交通大學 2014-12-08T15:42:19Z Reduction of resistivity of electroplated copper by rapid thermal annealing Chang, SC; Shieh, JM; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:42:17Z A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy Fang, CY; Lin, CF; Chang, EY; Feng, MS

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