|
"feng ms"的相关文件
显示项目 66-115 / 118 (共3页)
<< < 1 2 3 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:26:54Z |
AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etch
|
Huang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:53Z |
AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescence
|
Fang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si
|
Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
|
Chiu, SY; Wang, YL; Chang, SC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
|
Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:35Z |
Study on pressure-independent Cu removal in Cu abrasive-free polishing
|
Fang, JY; Huang, PW; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:12Z |
High-selectivity damascene chemical mechanical polishing
|
Chiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF |
| 國立交通大學 |
2014-12-08T15:05:05Z |
RADIATIVE RECOMBINATION MECHANISMS OF GAAS1-XPX
|
FENG, MS; HSIAO, HL |
| 國立交通大學 |
2014-12-08T15:04:54Z |
EFFECTS OF POLYSILICON GATE ON CHARACTERISTICS OF ONO CAPACITORS
|
FENG, MS; LIANG, KC; CHANG, CY; LIN, LY |
| 國立交通大學 |
2014-12-08T15:04:36Z |
SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
|
WU, CC; FENG, MS; LIN, KC; CHAN, SH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:30Z |
CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
CHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY |
| 國立交通大學 |
2014-12-08T15:04:29Z |
DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
|
WU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:26Z |
IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
FENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC |
| 國立交通大學 |
2014-12-08T15:04:25Z |
CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES
|
CHENG, HC; TAI, YH; FENG, MS; WANG, JJ |
| 國立交通大學 |
2014-12-08T15:04:13Z |
A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATION
|
WANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:06Z |
LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, CC |
| 國立交通大學 |
2014-12-08T15:04:04Z |
PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
|
CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:58Z |
ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
|
CHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:57Z |
GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING
|
HSIEH, IJ; FENG, MS; KUO, KT; LIN, P |
| 國立交通大學 |
2014-12-08T15:03:46Z |
CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING
|
HSIEH, IJ; CHU, KT; YU, CF; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:37Z |
A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
|
WANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:23Z |
EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE
|
FENG, MS; LIANG, CW |
| 國立交通大學 |
2014-12-08T15:03:20Z |
CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)
|
TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:12Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:10Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
|
LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:09Z |
SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES
|
KU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:09Z |
RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMS
|
KUO, HR; FENG, MS; GUO, JD; LEE, MC |
| 國立交通大學 |
2014-12-08T15:03:08Z |
SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
GUO, JD; FENG, MS; PAN, FM |
| 國立交通大學 |
2014-12-08T15:03:07Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:05Z |
Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin-film transistors
|
Liang, CW; Chiang, WC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:03:04Z |
BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
|
FENG, MS; FANG, CSA; CHEN, HD |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition
|
Wang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:54Z |
A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
|
Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT |
| 國立交通大學 |
2014-12-08T15:02:51Z |
Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
|
Liang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
|
Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:38Z |
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
|
Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:35Z |
Effects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layers
|
Tai, YH; Su, FC; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:34Z |
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
|
Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH |
| 國立交通大學 |
2014-12-08T15:02:34Z |
X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
|
Lee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
|
Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS |
| 國立交通大學 |
2014-12-08T15:02:31Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
|
Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
|
Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:58Z |
Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films
|
Tseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:57Z |
Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures
|
Tsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:46Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
|
Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
| 國立交通大學 |
2014-12-08T15:01:36Z |
Persistent photoconductivity in n-type GaN
|
Chen, HM; Chen, YF; Lee, MC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:30Z |
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
|
Wang, YL; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:28Z |
Growth and characterizations of GaN on SiC substrates with buffer layers
|
Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
|
Wang, YL; Liu, C; Feng, MS; Dun, JW; Chou, KS |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
|
Wang, YL; Liu, C; Chang, ST; Tsai, MS; Feng, MS; Tseng, WT |
显示项目 66-115 / 118 (共3页)
<< < 1 2 3 > >>
每页显示[10|25|50]项目
|
