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机构 日期 题名 作者
國立交通大學 2014-12-08T15:04:30Z CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION CHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY
國立交通大學 2014-12-08T15:04:29Z DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION WU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY
國立交通大學 2014-12-08T15:04:26Z IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION FENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC
國立交通大學 2014-12-08T15:04:25Z CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES CHENG, HC; TAI, YH; FENG, MS; WANG, JJ
國立交通大學 2014-12-08T15:04:13Z A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATION WANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC
國立交通大學 2014-12-08T15:04:06Z LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, CC
國立交通大學 2014-12-08T15:04:04Z PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW
國立交通大學 2014-12-08T15:03:58Z ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS CHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW
國立交通大學 2014-12-08T15:03:57Z GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING HSIEH, IJ; FENG, MS; KUO, KT; LIN, P
國立交通大學 2014-12-08T15:03:46Z CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING HSIEH, IJ; CHU, KT; YU, CF; FENG, MS

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