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"feng ms"的相关文件
显示项目 76-100 / 118 (共5页)
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| 國立交通大學 |
2014-12-08T15:04:30Z |
CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY |
| 國立交通大學 |
2014-12-08T15:04:29Z |
DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
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WU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:26Z |
IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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FENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC |
| 國立交通大學 |
2014-12-08T15:04:25Z |
CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES
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CHENG, HC; TAI, YH; FENG, MS; WANG, JJ |
| 國立交通大學 |
2014-12-08T15:04:13Z |
A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATION
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WANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:06Z |
LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, CC |
| 國立交通大學 |
2014-12-08T15:04:04Z |
PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
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CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:58Z |
ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
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CHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:57Z |
GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING
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HSIEH, IJ; FENG, MS; KUO, KT; LIN, P |
| 國立交通大學 |
2014-12-08T15:03:46Z |
CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING
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HSIEH, IJ; CHU, KT; YU, CF; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:37Z |
A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
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WANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:23Z |
EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE
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FENG, MS; LIANG, CW |
| 國立交通大學 |
2014-12-08T15:03:20Z |
CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)
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TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:12Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:10Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:09Z |
SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES
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KU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:09Z |
RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMS
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KUO, HR; FENG, MS; GUO, JD; LEE, MC |
| 國立交通大學 |
2014-12-08T15:03:08Z |
SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; PAN, FM |
| 國立交通大學 |
2014-12-08T15:03:07Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:05Z |
Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin-film transistors
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Liang, CW; Chiang, WC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:03:04Z |
BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
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FENG, MS; FANG, CSA; CHEN, HD |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:54Z |
A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
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Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT |
| 國立交通大學 |
2014-12-08T15:02:51Z |
Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
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Liang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
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Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
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