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Showing items 101-110 of 118 (12 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:02:38Z |
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:35Z |
Effects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layers
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Tai, YH; Su, FC; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:34Z |
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
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Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH |
| 國立交通大學 |
2014-12-08T15:02:34Z |
X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
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Lee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
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Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS |
| 國立交通大學 |
2014-12-08T15:02:31Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
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Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
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Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:58Z |
Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films
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Tseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:57Z |
Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures
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Tsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:46Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
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Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
Showing items 101-110 of 118 (12 Page(s) Totally)
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