|
"feng ms"的相關文件
顯示項目 26-75 / 118 (共3頁)
1 2 3 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:44:34Z |
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
|
Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:54Z |
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
|
Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:39Z |
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
|
Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:22Z |
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
|
Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films
|
Chao, CW; Hu, GR; Wu, YS; Chen, YC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:47Z |
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
|
Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
|
Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:28Z |
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
|
Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:19Z |
Reduction of resistivity of electroplated copper by rapid thermal annealing
|
Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:17Z |
A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
|
Fang, CY; Lin, CF; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
|
Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:42:09Z |
Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
|
Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:01Z |
The effect of plating current densities on self-annealing Behaviors of electroplated copper films
|
Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:42:00Z |
Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
|
Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Li, YH; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:49Z |
Leveling effects of copper electrolytes with hybrid-mode additives
|
Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:41:48Z |
Investigation of carrying agents on microstructure of electroplated Cu films
|
Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Investigations of pulse current electrodeposition for damascene copper metals
|
Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Pattern effects on planarization efficiency of Cu electropolishing
|
Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Improving the quality of electroplated copper films by rapid thermal annealing
|
Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:41:08Z |
Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si
|
Chao, CW; Wu, YCS; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
|
Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations
|
Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:24Z |
Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni
|
Chao, CW; Wu, YCS; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:06Z |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
|
Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Roles of copper mechanical characteristics in electropolishing
|
Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
|
Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
|
Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
|
Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
|
Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
|
Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:36:01Z |
Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
|
Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Study of Schottky barriers on n-type GaN grown by LP-MOCVD
|
Guo, JD; Feng, MS; Pan, FM |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors
|
Tai, YH; Su, FC; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
|
Wang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:24Z |
Modified double-layer PECVD passivation films for improving nonvolatile memory IC performance
|
Lin, CF; Tseng, WT; Feng, MS; Chang, YF |
| 國立交通大學 |
2014-12-08T15:27:17Z |
ULSI multi-layer thin film passivation processes for improving cache memory performance
|
Lin, CF; Tseng, WT; Feng, MS; Chang, YF; Hsu, JJ |
| 國立交通大學 |
2014-12-08T15:27:11Z |
A study on electrochemical metrologies for evaluating the removal selectivity of AlCMP
|
Chiu, SY; Hsu, JW; Tung, IC; Shih, HC; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Study of a common deep level in GaN
|
Wen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS |
| 國立交通大學 |
2014-12-08T15:27:05Z |
Study on chemical-mechanical polishing of low dielectric constant polyimide thin films
|
Tai, YL; Tsai, MS; Tung, IC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
|
Shieh, JM; Suen, SC; Lin, KC; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:54Z |
AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etch
|
Huang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:53Z |
AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescence
|
Fang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si
|
Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
|
Chiu, SY; Wang, YL; Chang, SC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
|
Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:35Z |
Study on pressure-independent Cu removal in Cu abrasive-free polishing
|
Fang, JY; Huang, PW; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:12Z |
High-selectivity damascene chemical mechanical polishing
|
Chiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF |
| 國立交通大學 |
2014-12-08T15:05:05Z |
RADIATIVE RECOMBINATION MECHANISMS OF GAAS1-XPX
|
FENG, MS; HSIAO, HL |
| 國立交通大學 |
2014-12-08T15:04:54Z |
EFFECTS OF POLYSILICON GATE ON CHARACTERISTICS OF ONO CAPACITORS
|
FENG, MS; LIANG, KC; CHANG, CY; LIN, LY |
| 國立交通大學 |
2014-12-08T15:04:36Z |
SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
|
WU, CC; FENG, MS; LIN, KC; CHAN, SH; CHANG, CY |
顯示項目 26-75 / 118 (共3頁)
1 2 3 > >>
每頁顯示[10|25|50]項目
|
