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Showing items 11-20 of 45  (5 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T04:29:28Z Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures Chyi, J.-I.; CHIH-CHUNG YANG; Cheng, Y.-C.; Tseng, C.-H.; Hsu, C.; Ma, K.-J.; Feng, S.-W.; Lin, E.-C.; Yang, C.C.
臺大學術典藏 2018-09-10T04:29:28Z Indium aggregated quantum dot structures in InGaN compounds Feng, S.-W.; Cheng, Y.-C.; Chung, Y.-Y.; Lin, E.-C.; Wang, H.-C.; Tang, T.-Y.; Deng, C.-C.; Lin, S.-J.; Ma, K.-J.; Lin, Y.-S.; Yang, C.C.; CHIH-CHUNG YANGet al.
臺大學術典藏 2018-09-10T04:29:26Z Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells Lin, Y.-S.; Feng, S.-W.; Cheng, Y.-C.; Lin, E.-C.; Yang, C.C.; Ma, K.-J.; Hsu, C.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; Chung, Y.-Y.; CHIH-CHUNG YANGet al.
臺大學術典藏 2018-09-10T04:29:26Z Quantum dot structures and their optical properties of a high-indium InGaN film Lin, E.-C.; Cheng, Y.-C.; Wang, H.-C.; Yang, C.C.; Ma, K.-J.; Shen, C.-H.; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.; Feng, S.-W.; CHIH-CHUNG YANGet al.
臺大學術典藏 2018-09-10T04:29:25Z Thermal annealing effects on the optical properties of high-indium InGaN epi-layers Cheng, Y.-C.; Lin, E.-C.; Wang, H.-C.; Yang, C.C.; Ma, K.-J.; Shen, C.-H.; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.; Feng, S.-W.; CHIH-CHUNG YANGet al.
臺大學術典藏 2018-09-10T04:29:25Z Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 Lin, E.-C.; Tang, T.-Y.; Cheng, Y.-C.; Wang, H.-C.; Yang, C.C.; Ma, K.-J.; Shen, C.-H.; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.; Feng, S.-W.; CHIH-CHUNG YANGet al.
臺大學術典藏 2018-09-10T04:10:09Z Formation of quasi-regular quantum dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells Ma, K.-J.; Hsu, C.; Chung, Y.-Y.; Liu, C.-W.; Feng, S.-W.; Cheng, Y.-C.; Yang, C.C.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; Weirich, T.E.; Lin, Y.-S.; CHIH-WEN LIU et al.
臺大學術典藏 2018-09-10T04:09:36Z Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures Feng, S.-W.; Cheng, Y.-C.; Chung, Y.-Y.; Liu, C.W.; Mao, M.-H.; Yang, C.-C.; Lin, Y.-S.; Ma, K.-J.; Chyi, J.-I.; MING-HUA MAO; CHIH-WEN LIU; CHIH-CHUNG YANG
臺大學術典藏 2018-09-10T04:09:36Z Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures Liao, C.-C.; Yang, C.C.; Lin, Y.-S.; Ma, K.-J.; Chang, C.-A.; Wu, E.-T.; Lai, F.-J.; Chuo, C.-C.; Lee, C.-M.; Chyi, J.-I.; Feng, S.-W.; CHIH-CHUNG YANG et al.
臺大學術典藏 2018-09-10T04:09:36Z Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells Lin, Y.-S.; Ma, K.-J.; Chung, Y.-Y.; Liu, C.-W.; Feng, S.-W.; Cheng, Y.-C.; Yang, C.C.; Kuo, C.-T.; Tsang, J.-S.; CHIH-WEN LIU; CHIH-CHUNG YANG

Showing items 11-20 of 45  (5 Page(s) Totally)
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