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"feng s w"的相關文件
顯示項目 16-25 / 45 (共5頁)
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| 臺大學術典藏 |
2018-09-10T04:29:25Z |
Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
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Lin, E.-C.; Tang, T.-Y.; Cheng, Y.-C.; Wang, H.-C.; Yang, C.C.; Ma, K.-J.; Shen, C.-H.; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.; Feng, S.-W.; CHIH-CHUNG YANGet al. |
| 臺大學術典藏 |
2018-09-10T04:10:09Z |
Formation of quasi-regular quantum dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells
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Ma, K.-J.; Hsu, C.; Chung, Y.-Y.; Liu, C.-W.; Feng, S.-W.; Cheng, Y.-C.; Yang, C.C.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; Weirich, T.E.; Lin, Y.-S.; CHIH-WEN LIU et al. |
| 臺大學術典藏 |
2018-09-10T04:09:36Z |
Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures
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Feng, S.-W.; Cheng, Y.-C.; Chung, Y.-Y.; Liu, C.W.; Mao, M.-H.; Yang, C.-C.; Lin, Y.-S.; Ma, K.-J.; Chyi, J.-I.; MING-HUA MAO; CHIH-WEN LIU; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:09:36Z |
Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures
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Liao, C.-C.; Yang, C.C.; Lin, Y.-S.; Ma, K.-J.; Chang, C.-A.; Wu, E.-T.; Lai, F.-J.; Chuo, C.-C.; Lee, C.-M.; Chyi, J.-I.; Feng, S.-W.; CHIH-CHUNG YANG et al. |
| 臺大學術典藏 |
2018-09-10T04:09:36Z |
Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells
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Lin, Y.-S.; Ma, K.-J.; Chung, Y.-Y.; Liu, C.-W.; Feng, S.-W.; Cheng, Y.-C.; Yang, C.C.; Kuo, C.-T.; Tsang, J.-S.; CHIH-WEN LIU; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:09:35Z |
Luminescence of localised excitons in InGaN/GaN multiple quantum wells
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Miasojedovas, S.; Jur?enas, S.; Kuril?ik, G.; ?ukauskas, A.; Feng, S.-W.; Yang, C.C.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:09:35Z |
Formation of quasi-regular quantum dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells
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Ma, K.-J.; Hsu, C.; Chung, Y.-Y.; Liu, C.-W.; Feng, S.-W.; Cheng, Y.-C.; Yang, C.C.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; Weirich, T.E.; Lin, Y.-S.; CHIH-CHUNG YANGet al. |
| 臺大學術典藏 |
2018-09-10T04:09:34Z |
Optical characteristics of InGaN/GaN quantum well structures with embedded quantum dots
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Chung, Y.-Y.; Lin, Y.-S.; Feng, S.-W.; Cheng, Y.-C.; Ma, K.-J.; Yang, C.C.; Kuo, C.-T.; Tsang, J.-S.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:09:34Z |
Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
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Feng, S.-W.; Cheng, Y.-C.; Chung, Y.-Y.; Yang, C.C.; Mao, M.-H.; Lin, Y.-S.; Ma, K.-J.; Chyi, J.-I.; MING-HUA MAO; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:09:32Z |
Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
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Ma, K.-J.; Hsu, C.; Chung, Y.-Y.; Liu, C.-W.; Feng, S.-W.; Cheng, Y.-C.; Yang, C.C.; Mao, M.-H.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; Weirich, T.E.; Lin, Y.-S.; MING-HUA MAO; CHIH-WEN LIU; CHIH-CHUNG YANGet al. |
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