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Showing items 46-55 of 190  (19 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 1995-02 A Current Waveform Simulator Using Charge-Bsed Current Model 馮武雄; Wang, J. H.; Fan, J. T.; Feng, Wu-Shiung; Wang, J. H.; Fan, J. T.
國立臺灣大學 1995 A New Delay Model with the Considerations of Internal Charges Wang, J. H.; Fan, J. T.; 馮武雄; Wang, J. H.; Fan, J. T.; Feng, Wu-Shiung
國立臺灣大學 1995 New Efficient Designs for XOR and XNOT Functions on Transistor Level Wang, J. M.; Fan, S. C.; 馮武雄; Wang, J. M.; Fan, S. C.; Feng, Wu-Shiung
國立臺灣大學 1994-06 Transient Sensitivity Computation of MOSFEET Circuits Using Iterated Timing Analysis and Selective-tracing Waveform Relaxation Chen, C. J.; 馮武雄; Chen, C. J.; Feng, Wu-Shiung
國立臺灣大學 1994-05 An H-V Alternating Router Tsai, C. C.; 陳少傑; 馮武雄; Tsai, C. C.; Chen, Sao-Jie; Feng, Wu-Shiung
國立臺灣大學 1994-03 An accurate time-domain current waveform simulator for VLSI circuits Wang, Jyh-Herng; Fan, Jen-Teng; Feng, Wu-Shiung
國立臺灣大學 1994-02 An Accurate Time-Domain Current Waveform Simulator for VLSI Circuits Wang, J. H.; Chang, M. L.; 馮武雄; Wang, J. H.; Chang, M. L.; Feng, Wu-Shiung
國立臺灣大學 1994 Charge-Based Current Model for CMOS Gates Wang, J. H.; Fan, J. T.; 馮武雄; Wang, J. H.; Fan, J. T.; Feng, Wu-Shiung
國立臺灣大學 1993 An Improved Analytical Short-Channel MOSFET Model Valid in All Regions of Operation for Analog/Digital Circuit Si[20642:0:4] 50300022:31:An Improved Analytical Short-Channel MOSFET Model Valid in All Regions of Operation for Analog/Digit Chow, H. C.; 馮武雄; Kuo, J. B.; Chow, H. C.; Feng, Wu-Shiung; Kuo, J. B.
國立臺灣大學 1993 BTS-Binary-Tree Timing Simulator with the Considerations of Internal Charges Wang, J. H.; Fan, J. T.; 馮武雄; Wang, J. H.; Fan, J. T.; Feng, Wu-Shiung

Showing items 46-55 of 190  (19 Page(s) Totally)
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