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"feng z c"
Showing items 16-25 of 122 (13 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T09:48:15Z |
Study of MgxZn1-xO alloys (0<x<0.15) by x-ray absorption spectroscopy
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Zheng, W.;Feng, Z.C.;Fan-Hsiu, C.;Lee, J.-F.;Zheng, R.S.;Wuu, D.-S.;Liu, C.W.; Zheng, W.; Feng, Z.C.; Fan-Hsiu, C.; Lee, J.-F.; Zheng, R.S.; Wuu, D.-S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:48:15Z |
Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration
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Sun, H.Y.;Lien, S.-C.;Qiu, Z.R.;Wang, H.C.;Mei, T.;Liu, C.W.;Feng, Z.C.; Sun, H.Y.; Lien, S.-C.; Qiu, Z.R.; Wang, H.C.; Mei, T.; Liu, C.W.; Feng, Z.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
4H-SiC wafers studied by X-ray absorption and Raman scattering
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Xu, Q.; CHEE-WEE LIU et al.; Sun, H.Y.; Chen, C.; Jang, L.-Y.; Rusli; Mendis, S.P.; Tin, C.C.; Qiu, Z.R.; Wu, Z.; Liu, C.W.; Feng, Z.C. |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (100) epilayers
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Talwar, D.N.; Feng, Z.C.; Liu, C.W.; Tin, C.-C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:33Z |
Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si
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Feng, Z.C.; Chen, C.; Xu, Q.; Mendis, S.P.; Jang, L.-Y.; Tin, C.-C.; Lee, K.-Y.; Liu, C.W.; Wu, Z.; Qiu, Z.R.; KUNG-YEN LEE; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T08:33:11Z |
Synchrotron radiation X-ray absorption and optical studies of cubic SiC films grown on Si by chemical vapor deposition
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Tu, Y.-L.;Huang, Y.-H.;Kong, L.;Lee, K.-Y.;Jang, L.-Y.;Tin, C.-C.;Liu, C.-W.;Feng, Z.C.; Tu, Y.-L.; Huang, Y.-H.; Kong, L.; Lee, K.-Y.; Jang, L.-Y.; Tin, C.-C.; Liu, C.-W.; Feng, Z.C.; KUNG-YEN LEE; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T07:36:11Z |
Occurrence of polytype transformation during nitrogen doping of SiC bulk wafer
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Chen, J.;Lien, S.C.;Shin, Y.C.;Feng, Z.C.;Kuan, C.H.;Zhao, J.H.;Lu, W.J.; Chen, J.; Lien, S.C.; Shin, Y.C.; Feng, Z.C.; Kuan, C.H.; Zhao, J.H.; Lu, W.J.; CHIEH-HSIUNG KUAN; KUNG-YEN LEE |
| 臺大學術典藏 |
2018-09-10T05:18:30Z |
Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition
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Feng, Z.C.; Liu, W.; Chua, S.J.; Chen, J.H.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T05:18:30Z |
P-type doping in GaN through Be implantation
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Feng, Z.C.; Sun, Y.J.; Tan, L.S.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:49:37Z |
Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
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Cheng, Y.-C.;Wu, C.-M.;Chen, M.-K.;Yang, C.C.;Feng, Z.-C.;Li, G.A.;Yang, J.-R.;Rosenauer, A.;Ma, K.-J.; Cheng, Y.-C.; Wu, C.-M.; Chen, M.-K.; Yang, C.C.; Feng, Z.-C.; Li, G.A.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; CHIH-CHUNG YANG |
Showing items 16-25 of 122 (13 Page(s) Totally)
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