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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T08:33:11Z	Synchrotron radiation X-ray absorption and optical studies of cubic SiC films grown on Si by chemical vapor deposition	Tu, Y.-L.;Huang, Y.-H.;Kong, L.;Lee, K.-Y.;Jang, L.-Y.;Tin, C.-C.;Liu, C.-W.;Feng, Z.C.; Tu, Y.-L.; Huang, Y.-H.; Kong, L.; Lee, K.-Y.; Jang, L.-Y.; Tin, C.-C.; Liu, C.-W.; Feng, Z.C.; KUNG-YEN LEE; CHEE-WEE LIU
臺大學術典藏	2018-09-10T07:36:11Z	Occurrence of polytype transformation during nitrogen doping of SiC bulk wafer	Chen, J.;Lien, S.C.;Shin, Y.C.;Feng, Z.C.;Kuan, C.H.;Zhao, J.H.;Lu, W.J.; Chen, J.; Lien, S.C.; Shin, Y.C.; Feng, Z.C.; Kuan, C.H.; Zhao, J.H.; Lu, W.J.; CHIEH-HSIUNG KUAN; KUNG-YEN LEE
臺大學術典藏	2018-09-10T05:18:30Z	Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition	Feng, Z.C.; Liu, W.; Chua, S.J.; Chen, J.H.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG
臺大學術典藏	2018-09-10T05:18:30Z	P-type doping in GaN through Be implantation	Feng, Z.C.; Sun, Y.J.; Tan, L.S.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG
臺大學術典藏	2018-09-10T04:49:37Z	Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers	Cheng, Y.-C.;Wu, C.-M.;Chen, M.-K.;Yang, C.C.;Feng, Z.-C.;Li, G.A.;Yang, J.-R.;Rosenauer, A.;Ma, K.-J.; Cheng, Y.-C.; Wu, C.-M.; Chen, M.-K.; Yang, C.C.; Feng, Z.-C.; Li, G.A.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; CHIH-CHUNG YANG
臺大學術典藏	2018-09-10T04:49:36Z	Surface chemical states of heteroepitaxial nitride films on sapphire by metalorganic chemical vapor deposition	Li, K.; Feng, Z.C.; Yang, C.-C.; Lin, J.; Li, K.; Feng, Z.C.; Yang, C.-C.; Lin, J.; CHIH-CHUNG YANG
國立臺灣海洋大學	2013-08	Luminescence studies in InxGa1_xN epitaxial layers with different indium contents	Wu, T. Y.; Chang, C. C.; Tiong, K. K.; Lee, Y. C.; Hu, S. Y.; Lin, L. Y.; Lin, T. Y.; Feng, Z. C.
東方設計學院	2010-11-18	Optical Properties of Quaternary Inx Aly Ga1-x-yN/GaN thin film	Hu, S.Y.; Lee, Y.C; Feng, Z.C.; Yang, S.H.; Chen, Y.C.; 胡勝耀; (東方設計學院電機工程系)
東方設計學院	2010-03-07	Urbach tail studies of In0.01AL0.11Ga0.88N/GaN film	Hu, S.Y.; Lee, Y.C.; Feng, Z.C.; Yang, S.H.; 胡勝耀; (東方技術學院電機工程系)
國立臺灣科技大學	2009	Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures	Kuo T.W.; Lin T.Y.; Feng Z.C.; Liu W.; Chua S.J.; Tsai H.L.; Yang J.R.; Huang Y.S.; Ferguson I.T.; Lu W.
國立臺灣科技大學	2008	Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes	Feng Z.C.; Kuo T.-W.; Wu C.Y.; Tsai H.-L.; Yang J.-R.; Huang Y.S.; Ferguson I.T.; Lu W.
國立臺灣大學	2008	Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire	Sun, S.; Tompa, G.S.; Rice, C.; Sun, X.W.; Lee, Z.S.; Lien, S.C.; Huang, C.W.; Cheng, L.C.; Feng, Z.C.
國立臺灣大學	2008	Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering	Feng, Z.C.; Hou, F.C.; Webb, J.B.; Shen, Z.X.; Rusli, E.; Ferguson, I.T.; Lu, W.
國立臺灣大學	2008	Structural and Optical Studies on Ion-implanted 6H–SiC Thin Films	Feng, Z.C.; Lien, S.C.; Zhao, J.H.; Sun, X.W.; Lu, W.
國立臺灣大學	2008	Material Properties of GaN Films Grown on SiC/SOI Substrate	Feng, Z. C.; Tran, C.; Ferguson, I. T.; Zhao, J. H.
國立臺灣大學	2008	Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer	Chen, J.; Lien, S. C.; Shin, Y. C.; Feng, Z. C.; Kuan, C. H.; Zhao, J. H.; Lu, W. J.
國立臺灣大學	2008	Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films	Feng, Z. C.; Lien, S. C.; Zhao, J. H.; Lu, X. W. Sun and W.
國立臺灣大學	2007-11	Observation of V defects in multiple InGaN/GaN quantum well layers	Tsai, H. L.; Wang, T. Y.; Yang, J. R.; Chuo, C. C.; Hsu, J. T.; Feng, Z. C.; Shiojiri, Makoto
國立臺灣大學	2006	Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures	Chen, J. H.; Feng, Z. C.; Wang, J. C.; Tsai, H. L.; Yang, J. R.; Parekh, A.; Armour, E.; Faniano, ?P.
國立臺灣大學	2006	Optical and structural properties of INGaN;/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition	Chen, J. H.; Feng, Z. C.; Tsai, H. L.; Yang, J. R.; Li, P.; Wetzel, C.; Detchprohm, T.; Nelson, J.
國立臺灣大學	2006	Optical and material properties of sandwiched Si/SiGe/Si heterostructures	Feng, Z.C.; Yu, J.W.; Zhao, J.; Yang, T.R.; Karunasiri, R.P.G.; Lu, W.; Collins, W.E.
國立臺灣大學	2006	Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile	Feng, Z.C.; Yu, J.W.; Li, K.; Feng, Y.P.; Padmanabhan, K.R.; Yang, T.R.
國立臺灣大學	2006	Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering	Zhao, J.; Feng, Z.C.; Wang, Y.C.; Deng, J.C.; Xu, G.
國立臺灣大學	2006	Pulse source injection molecular beam epitaxy and characterization of nano-scale thin GaN layers on Si substrates	Tong, W.; Harris, M.; Wagner, B.K.; Yu, J.W.; Lin, H.C.; Feng, Z.C.
國立臺灣大學	2006	Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing	Zhao, J.; Chen, J.; Feng, Z.C.; Chen, J.L.; Liu, R.; Xu, G.

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