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Showing items 1-11 of 11  (1 Page(s) Totally)
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Institution Date Title Author
中原大學 2001-06-19 Method of fabricating a self-aligned contact Chien-Sheng Hsieh;Wei-Ray Lin;Fu-Liang Yang;Erik S. Jeng;Bor-Ru Sheu
中原大學 2001-01-30 Formation of finely controlled shallow trench isolation for ULSI process Fu-Liang Yang;Bih-Tiao Lin;Wei-Ray Lin;Erik S. Jeng
中原大學 2000-10-31 Method for eliminating CMP induced microscratches Fu-Liang Yang;Bih-Tiao Lin;Tzu-Shih Yen;Bi-Ling Chen;Erik S. Jeng
中原大學 2000-06-06 Method for simultaneously fabricating a DRAM capacitor and metal interconnections Fu-Liang Yang;Erik S. Jeng;Bih-Tiao Lin;I-Ping Lee
中原大學 2000-05-09 Method to fabricate isolation by combining locos and shallow trench isolation for ULSI technology Fu-Liang Yang;Wei-Ray Lin;Ming-Hong Kuo;Erik S. Jeng
中原大學 1999-11-30 Method of fabricating contact holes in high density integrated circuits using taper contact and self-aligned etching processes Fu-Liang Yang;Tzu-Shih Yen;鄭湘原
中原大學 1999-09-21 Method for simultaneously forming capacitor plate and metal contact structures for a high density DRAM device Fu-Liang Yang;Bi-Ling Chen;鄭湘原
中原大學 1998-11-10 Method of forming an isolation region in a semiconductor substrate Erik S. Jeng;Fu-Liang Yang
中原大學 1998-09-08 Method of manufacturing a crown shape capacitor in semiconductor memory using a single step etching Fu-Liang Yang;Erik S. Jeng;Yu-Chun Ho;Bin Liu;Chao-Ming Koh
中原大學 1998-08-11 Method for manufacturing double-crown capacitors self-aligned to node contacts on dynamic random access memory Erik S. Jeng;Fu-Liang Yang
中原大學 1997-10-14 Method of fabricating single crown, extendible to triple crown, stacked capacitor structures, using a self-aligned capacitor node contact Fu-Liang Yang;Erik S. Jeng

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