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Showing items 16-25 of 37  (4 Page(s) Totally)
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Institution Date Title Author
南台科技大學 2005 Rectifying characteristics of WSi0.8--GaN Schottky barrier diodes with a GaN cap layer grown at low temperature 李明倫; J. K. Sheu; M. L. Lee; H. C. Tseng; W. C. Lai; G. C. Chi
南台科技大學 2005 Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase 李明倫; J. K. Sheu; S. S. Chen; M. L. Lee; W. C. Lai; W. H. Chang; G. C. Chi
南台科技大學 2004-10 Planar GaN-based UV Photodetectors formed by Si Implantation 李明倫; M. C. Chen; J.K. Sheu; M. L. Lee; G.C. Chi; C.J. Gao; C.J. Tun
南台科技大學 2004 Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer 李明倫; M. L. Lee; J. K. Sheu; Y. K. Su; S. J. Chang; W. C. Lai; G. C. Chi
南台科技大學 2004 Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors 李明倫; C. J. Kao; J. K. Sheu; W. C. Lai; M. L. Lee; M. C. Chen; G. C. Chi
南台科技大學 2004 Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer 李明倫; J. K. Sheu; C. J. Kao; M. L. Lee; W. C. Lai; L. S. Yeh; G. C. Chi; S. J. Chang; Y. K. Su; J. M. Tsai
南台科技大學 2004 Characterization of GaN Schottky barrier photodiodes with a low-temperature growth GaN cap layer 李明倫; M. L. Lee; J. K. Sheu; Y. K. Su; S. J. Chang; W. C. Lai; G. C. Chi
南台科技大學 2003 Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer 李明倫; M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; J. M. Tsai; G. C. Chi
南台科技大學 2003 Deep level defect in Si-implanted GaN n+-p junction 李明倫; J. K. Sheu;M. L. Lee; G. C. Chi;S. J. Chang
南台科技大學 2003 GaN Metal–Semiconductor–Metal Photodetectors With Low-Temperature-GaN Cap Layers and ITO Metal Contacts 李明倫; S. J. Chang; M. L. Lee; J. K. Sheu; W. C. Lai; Y. K. Su; C. S. Chang; C. J. Kao; G. C. Chi; J. M. Tsai

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