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Showing items 26-37 of 37 (2 Page(s) Totally)
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| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
李明倫; M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; J. M. Tsai; G. C. Chi |
| 南台科技大學 |
2003 |
Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
|
李明倫; L. S. Yeh; M. L. Lee; J. K. Sheu; M. G. Chen; C. J. Kao; G. C. Chi; S. J. Chang; Y. K. Su |
| 南台科技大學 |
2003 |
Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer
|
李明倫; J. K. Sheu; C. J. Kao; M. L. Lee; W. C. Lai; L. S. Yeh; G. C. Chi; S. J. Chang; Y. K. Su; J. M. Tsai |
| 南台科技大學 |
2003 |
Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer
|
李明倫; G. C. Chi; J.K. Sheu; M. L. Lee; C.J. Kao; Y.K. Su; S.J. Chang; W.C. Lai |
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
李明倫; M. L. Lee; J. K. Sheu; C. J. Kao; M. C. Chen; C. J. Tun; W. C. Lai; Y. K. Su; S.J. Chang; G. C. Chi |
| 國立東華大學 |
2003 |
Silicon-based transmissive diffractive optical element
|
王智明; Wang, Chih-Ming; C. C. Lee;Y. C. Chang;C. M. Wang;J. Y. Chang;G. C. Chi |
| 國立成功大學 |
2003 |
Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer
|
Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi |
| 南台科技大學 |
2002 |
Planar GaN n+-p photodetectors formed by Si implants into p-GaN
|
李明倫; J. K. Sheu; M. L. Lee; L. S. Yeh; C. J. Kao; C. J. Tun; M. J. Chen; G. C. Chi; S. J. Chang; Y. K. Su; C. T. Lee |
| 南台科技大學 |
2002 |
Characterization of Si implants in p-type GaN
|
李明倫; J. K. Sheu; M. L. Lee; C. J. Tun; C. J. Kao; L. S. Yeh; C. C. Lee; G. C. Chi |
| 南台科技大學 |
2002 |
GaN p–n junction diode formed by Si ion implantation into p-GaN
|
李明倫; M. L. Lee; J. K. Sheu; L. S. Yeh; M. S. Tsai; C. J. Kao; C. J. Tun; S. J. Chang; G. C. Chi |
| 國立中山大學 |
2002 |
Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
|
J.W. Chiou;S. Mookerjee;K.V.R. Rao;J.C. Jan;H.M. Tsai;K. Asokan;W.F. Pong;F.Z. Chien;M.H. Tsai;Y.K. Chang;Y.Y. Chen;J.F. Lee;C.C. Lee;G.C. Chi |
| 國立臺灣海洋大學 |
1998-11-15 |
Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures
|
T. Y. Lin;H. M. Chen;M. S. Tsai;Y. F. Chen;F. F. Fang;C. F. Lin;G. C. Chi |
Showing items 26-37 of 37 (2 Page(s) Totally)
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