| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10
|
I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy
|
S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
|
Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu, |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy
|
D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
Mid-infrared InAsPSb/InAsSb quantum-well light emitter
|
C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes
|
A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; A. Krier,; Q. D. Zhuang,; M. Stone,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Growth of InPSb on InAs inside a miscibility gap using gas source MBE
|
G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
InPSb bulk layers grown by gas source molecular beam epitaxy
|
G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications
|
G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy
|
G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE
|
L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 國立臺灣海洋大學 |
1997-09 |
Heterogeneous N-deacetylation of Chitin in Alkaline Solution
|
Chang, K. L. B.;G. Tsai; J. Lee;W. R. Fu |
