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"gan der shin"的相關文件
顯示項目 1-10 / 31 (共4頁)
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| 國立交通大學 |
2019-04-02T05:59:03Z |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T08:31:00Z |
Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
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Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:39:56Z |
Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
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Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Kuan-Chang; Huang, Hui-Chun; Chen, Shih-Ching; Lu, Jin; Gan, Der-Shin; Ho, New-Jin; Young, Tai-Fa; Jhang, Geng-Wei; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:34:04Z |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
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Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
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Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:09Z |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
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Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
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Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:31Z |
The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
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