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Institution	Date	Title	Author
臺大學術典藏	2020-04-21T03:52:23Z	Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs	Goble, N. J.; Sucharitakul, S.; Kumar, U. R.; Sankar, R.; Bogorad, Z. A.; Chou, F. C.; Chen, Y. T.; Gao, X. P. A.

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