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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 國立成功大學 |
2011-12 |
Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction
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Liu, Yi-Jung; Guo, Der-Feng; Chu, Kuei-Yi; Cheng, Shiou-Ying; Liou, Jian-Kai; Chen, Li-Yang; Tsai, Tsung-Han; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shian; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立臺灣海洋大學 |
2011-02 |
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
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Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui |
| 國立成功大學 |
2009-02 |
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
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Chen, Tzu-Pin; Lee, Chi-Jhung; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2009 |
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
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Chen, Tzu-Pin; Lee, Chi-Jhung; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Ku, Ghun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2008-02 |
Investigation on heterostructural optoelectronic switches
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Guo, Der-Feng; Tsai, Jung-Hui; Weng, Tzu-Yen; Yeng, Chih-Hung; Lai, Po-Hsien; Fu, Ssu-Yi; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-02-01 |
Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors
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Chen, Tzu-Pin; Fu, Ssu-I; Liu, Wen-Chau; Cheng, Shiou-Ying; Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung |
| 國立成功大學 |
2007 |
Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure
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Chen, Tzu-Pin; Fu, Ssu-I; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
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Chen, Tzu-Pin; Fu, Ssu-I; Tsai, Jung-Hui; Lour, Wen-Shiung; Guo, Der-Feng; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2004-05 |
New InP-InGaAsHBT with a superlattice-collector structure
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Chen, Jing-Yuh; Guo, Der-Feng; Cheng, Shiou-Ying; Lee, Kuan-Ming; Chen, Chun-Yuan; Chuang, Hung-Ming; Fu, Ssu-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2004-04 |
A double-barrier-emitter triangular-baffier optoelectronic switch
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Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-04 |
Characteristics of a new BBOS with an AlGaAs-delta(n(+))-GaAs-InAlGaP collector structure
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Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
Showing items 1-16 of 16 (1 Page(s) Totally)
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