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Showing items 1-23 of 23 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:00Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
|
Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
| 國立交通大學 |
2019-04-02T05:59:32Z |
Growth and characterizations of GaN on SiC substrates with buffer layers
|
Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY |
| 國立交通大學 |
2019-04-02T05:59:26Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2019-04-02T05:59:14Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
|
LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
|
Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition
|
Lai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Electrical properties of multiple high-dose Si implantation in p-GaN
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Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:06Z |
Electrical properties of the Si implantation in Mg doped p-GaN
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Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Study of Schottky barriers on n-type GaN grown by LP-MOCVD
|
Guo, JD; Feng, MS; Pan, FM |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Study of a common deep level in GaN
|
Wen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS |
| 國立交通大學 |
2014-12-08T15:03:10Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
|
LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:09Z |
RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMS
|
KUO, HR; FENG, MS; GUO, JD; LEE, MC |
| 國立交通大學 |
2014-12-08T15:03:08Z |
SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
GUO, JD; FENG, MS; PAN, FM |
| 國立交通大學 |
2014-12-08T15:03:07Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
|
GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:02:54Z |
A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
|
Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT |
| 國立交通大學 |
2014-12-08T15:02:45Z |
High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P
|
Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:34Z |
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
|
Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH |
| 國立交通大學 |
2014-12-08T15:02:34Z |
X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
|
Lee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD |
| 國立交通大學 |
2014-12-08T15:02:31Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
|
Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
|
Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:57Z |
Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures
|
Tsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:46Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
|
Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
| 國立交通大學 |
2014-12-08T15:01:28Z |
Growth and characterizations of GaN on SiC substrates with buffer layers
|
Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY |
Showing items 1-23 of 23 (1 Page(s) Totally)
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