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Showing items 1-10 of 10 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:22Z |
The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy
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Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY |
| 國立交通大學 |
2014-12-08T15:45:42Z |
Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
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Chen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF |
| 國立交通大學 |
2014-12-08T15:44:38Z |
Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
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Wang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ |
| 國立交通大學 |
2014-12-08T15:18:30Z |
Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs
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Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT |
| 國立交通大學 |
2014-12-08T15:18:19Z |
Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn) As
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Chen, YF; Lee, WN; Huang, JH; Chin, TS; Guo, XJ; Ku, HC |
| 國立交通大學 |
2014-12-08T15:18:11Z |
Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs
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Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT |
| 國立交通大學 |
2014-12-08T15:17:34Z |
(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates
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Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Chin, TS; Ku, HC |
| 國立交通大學 |
2014-12-08T15:16:58Z |
MBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductors
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Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Ku, HC |
| 國立交通大學 |
2014-12-08T15:01:20Z |
The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy
|
Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY |
| 義守大學 |
2009-05 |
Diamond-like carbon thin films synthesis by low temperature atmospheric pressure plasma method
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Liu WJ; Guo XJ; Chang CL;Lu JH |
Showing items 1-10 of 10 (1 Page(s) Totally)
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