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Institution	Date	Title	Author
臺大學術典藏	2020	Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)	VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏	2018-09-10T15:25:55Z	Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques	H. P. Hsu,;J. D. Wu,;Y. J. Lin,;Y. S. Huang,;Y. R. Lin,;H. H. Lin,; H. P. Hsu,; J. D. Wu,; Y. J. Lin,; Y. S. Huang,; Y. R. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:12Z	X-ray absorption near edge structure of silicon in indium arsenide	M. C. Liu,;Z. C. Feng,;H. H. Lin,; M. C. Liu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:12Z	Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer	T. H. Huang,;W. C. Chen,;K. C. Chen,;H. H. Lin,; T. H. Huang,; W. C. Chen,; K. C. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:12Z	Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate	C. Y. Tsai,;B. Xin,;Z. C. Feng,;Y. M. Zhang,;R. X. Jia,;H. H. Lin,; C. Y. Tsai,; B. Xin,; Z. C. Feng,; Y. M. Zhang,; R. X. Jia,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:11Z	Ordering InGaP epilayer grown on Ge substrate	H. M. Wu,;S. J. Tsai,;Y. C. Chang,;Y. R. Chen,;H. H. Lin,; H. M. Wu,; S. J. Tsai,; Y. C. Chang,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:11Z	Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure	C. Y. Tsai;M. C. Liu;Y. C. Chin;Z. C. Feng;H. H. Lin; C. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:11Z	Structural properties of GaAsSb grown on (111)B GaAs	Y. H. Lin,;S. C. Chen,;Y. R. Chen,;H. H. Lin,; Y. H. Lin,; S. C. Chen,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:11Z	Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity	H. H. Lin,; HAO-HSIUNG LIN; Y. C. Lin,; M. H. Mao,; C. J. Wu,; Y. C. Lin,;M. H. Mao,;C. J. Wu,;H. H. Lin,
臺大學術典藏	2018-09-10T15:00:11Z	Band discontinuity in InAsPSb alloy system	C. Y. Tsai;W. C. Chen;P. H. Chang;C. I. Wu;H. H. Lin; C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:11Z	Effect of focued ion beam imaging process on the crystallinity of InAs	T. H. Huang;W. C. Chen;K. C. Chen;H. H. Lin; T. H. Huang; W. C. Chen; K. C. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:11Z	Photoluminescence and Raman scattering of degenerate InN	F. W. Pranoto,;C. Y. Tsai,;Y. C. Liao,;L. C. Chen,;K. H. Chen,;H. H. Lin,;Z. C. Feng,; F. W. Pranoto,; C. Y. Tsai,; Y. C. Liao,; L. C. Chen,; K. H. Chen,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:11Z	Study of twin defects in (111)B GaAsSb by X-ray diffraction	S. C. Chen,;Y. H. Lin,;H. H. Lin,; S. C. Chen,; Y. H. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T15:00:10Z	Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy	H. P. Hsu,;P. H. Wu,;J. Y. Chen,;B. H. Chen,;Y. S. Huang,;Y. C. Chin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; P. H. Wu,; J. Y. Chen,; B. H. Chen,; Y. S. Huang,; Y. C. Chin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:19Z	Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes	C. X. Wang,;Y. T. He,;M. T. Niu,;J. Y. Yao,;E. Jones,;Z. R. Qiu,;X. Zhang,;H. H. Lin,;Z. C. Feng,; C. X. Wang,; Y. T. He,; M. T. Niu,; J. Y. Yao,; E. Jones,; Z. R. Qiu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:19Z	Raman spectroscopy of GaAsPSb alloys	C. Y. Tsai,;Y. C. Chin,;H. H. Lin,; C. Y. Tsai,; Y. C. Chin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:19Z	Properties of Variable Al Content of AlGaN Layers Grown by MOCVD	C. X. Wang,;F. D. Li,;S. C. Wang,;M. Zhu,;X. Zhang,;H. H. Lin,;Z. C. Feng,; C. X. Wang,; F. D. Li,; S. C. Wang,; M. Zhu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Short range structure of dilute nitride GaAsSbN	H. H. Lin,;C. L. Chiou,;Y. T. Lin,;T. C. Ma,;J. S. Wu,;Z. C. Feng,; H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy	Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)	D. N. Talwar,;T. R. Yang,;H. H. Lin,;Z. C. Feng,; D. N. Talwar,; T. R. Yang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation	K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs	Y. R. Chen,;H. H. Lin; Y. R. Chen,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate	Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN; H. M. Wu,;Y. J. Yang,;H. H. Lin,; H. M. Wu,
臺大學術典藏	2018-09-10T09:50:18Z	Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering	B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	GaAsPSb and its application to heterojunction bipolar transistors	Y. C. Chin,;H. H. Lin,;H. S. Guo,;C. H. Huang,; Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN

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