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Showing items 196-205 of 259  (26 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T03:50:04Z Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:04Z InAsN Grown by Plasma-assisted Gas Source MBE HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih,
臺大學術典藏 2018-09-10T03:50:03Z InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:03Z High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:03Z (AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:03Z Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE D. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:03Z Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well M. H. Lee; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:02Z Insulator-quantum Hall conductor transitions at low magnetic field C. F. Huang,; Y. H. Chang,; C. H. Lee,; H. D. Yeh,; C.-T. Liang,; Y. F. Chen,; H. H. Lin,; H. H. Cheng,; G. J. Hwang,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:02Z Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells C. H. Lee,; Y. H. Chang,; C. F. Huang,; M. Y. Huang,; H. H. Lin,; C. P. Lee,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:02Z Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN

Showing items 196-205 of 259  (26 Page(s) Totally)
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