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Showing items 106-155 of 259 (6 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:08:00Z	Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure	Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; S. D. Lin; K. Y. Chen,; HAO-HSIUNG LINet al.
臺大學術典藏	2018-09-10T07:07:59Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:59Z	Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems	Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; J. Y. Wu; S. D. Lin; K. Y. Chen,; CHI-TE LIANG; HAO-HSIUNG LINet al.
臺大學術典藏	2018-09-10T07:07:58Z	Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells	T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:59Z	Narrow Band Gap Semiconductor	H. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T06:34:46Z	Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors	Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Effect of thermal annealing on the optical properties of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Origin of the annealing-induced blue-shift in GaAsSbN bulk layers	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy	C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates	T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m	C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10	I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy	L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy	S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies	T. T. Chen,; C. L. Cheng,; Y. F. Chen,; F. Y. Chang,; H. H. Lin,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T06:34:43Z	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,
臺大學術典藏	2018-09-10T06:34:43Z	Comparative study of InAs quantum dots with different InGaAs capping methods	C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:01Z	Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy	T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy	D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	MBE growth of quaternary InAsPSb alloy	H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	GaAsSbN grown on GaAs by gas source molecular beam epitaxy	T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	Mid-infrared InAsPSb/InAsSb quantum-well light emitter	C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy	T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes	A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics	Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN; CHI-KUANG SUN
臺大學術典藏	2018-09-10T06:01:58Z	Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy	P. W. Liu,; G. Tsai,; H. H. Lin,; A. Krier,; Q. D. Zhuang,; M. Stone,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy	P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Growth of InPSb on InAs inside a miscibility gap using gas source MBE	G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Numerical simulation on optical properties of GaN/AlN quantum dots	C. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well	G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	GaAsSb/GaAs quantum wells grown by MBE	H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	Study on the band line-up of GaAsSb/GaAs quantum wells	C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	InAs/InGaAs/GaAs coupled quantum-dot laser	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	InPSb bulk layers grown by gas source molecular beam epitaxy	G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers	C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Performance evaluation of field-enhanced p-channel split-gate flash memory	W. T. Chu,; H. H. Lin,; Y. H. Wang,; C. T. Hsieh,; Y. T. Lin,; C. S. Wang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers	C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN

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