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Showing items 106-115 of 259  (26 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T07:08:00Z Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; S. D. Lin; K. Y. Chen,; HAO-HSIUNG LINet al.
臺大學術典藏 2018-09-10T07:07:59Z Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:07:59Z Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; J. Y. Wu; S. D. Lin; K. Y. Chen,; CHI-TE LIANG; HAO-HSIUNG LINet al.
臺大學術典藏 2018-09-10T07:07:58Z Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:59Z Narrow Band Gap Semiconductor H. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T06:34:46Z Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:46Z Effect of thermal annealing on the optical properties of GaAsSbN Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:46Z Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:46Z Origin of the annealing-induced blue-shift in GaAsSbN bulk layers Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:46Z Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN

Showing items 106-115 of 259  (26 Page(s) Totally)
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