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"h h lin"
Showing items 156-165 of 259 (26 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers
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G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes
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H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Growth of InAs quantum dots with light emission at 1.3 m
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F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications
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G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Study on high-power resonant-cavity light-emitting diodes
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L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection
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C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm
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F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy
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T. S. Lay,; W. T. Kuo,; L. P. Chen,; Y. H. Lai,; H. Hung,; J. S. Wang,; J. Y. Chi,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells
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T. T. Chen,; W. S. Su,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers
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M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO; HAO-HSIUNG LIN |
Showing items 156-165 of 259 (26 Page(s) Totally)
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