| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection
|
C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm
|
F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy
|
T. S. Lay,; W. T. Kuo,; L. P. Chen,; Y. H. Lai,; H. Hung,; J. S. Wang,; J. Y. Chi,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells
|
T. T. Chen,; W. S. Su,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers
|
M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:46Z |
Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy
|
C. M. Lai,; F. Y. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:46Z |
Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
|
Y.-M. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:58:46Z |
Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation
|
D. R. Hang,; D. K. Shih,; C. F. Huang,; W. K. Hung,; Y. H. Chang,; Y. F. Chen,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Resonant-cavity light-emitting diodes with coupled cavity
|
L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy
|
F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures
|
Y. M. Chang,; N. A. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy
|
G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu; Y. S. Huang; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser
|
H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers
|
H.-H. Lin,; D.-K. Shih,; Y.-H. Lin,; K.-H. Chiang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers
|
HAO-HSIUNG LIN; H. H. Lin,; P. W. Liu,; G. H. Liao, |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Temperature dependence of photoreflectance in InAs/GaAs quantum dots
|
C. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells
|
T. T. Chen,;C. H. Chen,;W. Z. Cheng,;W. S. Su,;M. H. Ya,;Y. F. Chen,;P. W. Liu,;H. H. Lin,; T. T. Chen,; C. H. Chen,; W. Z. Cheng,; W. S. Su,; M. H. Ya,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers
|
L. W. Sung; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
|
F. Y. Chang; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:06Z |
A study of optical properties of InGaAs/GaAs quantum dots
|
C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:06Z |
Band Gap Reduction in InAsN Alloys
|
D. K. Shih; H. H. Lin; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:06Z |
Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy
|
D. K. Shih,; HAO-HSIUNG LIN; H. H. Lin,; J. S. Wang,; G. R. Chen, |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
Raman scattering characterization of InAsN bulk film on (100) InP substrates
|
D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
Low-threshold ~1.3m GaAsSb quantum well laser
|
P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
1.3m InAs/InGaAs quantum dot lasers grown by GSMBE
|
F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
Optical characterization on InAs/GaAs quantum dots
|
C. M. Lai,; F. Y. Chang,; C. W. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser
|
P.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
Femtosecond carrier dynamics in InGaAsN single quantum well
|
L. W. Sung,; H. H. Lin,; B. R. Wu,; N. T. Yeh,; HAO-HSIUNG LIN; T. M. Liu,; M. C. Tien,; J. W. Shi,; C. K. Sun, |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE
|
L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs
|
W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers
|
C. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
On the InAs(N)/InGaAs quantum wells
|
T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well
|
P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
InAsN Grown by Plasma-assisted Gas Source MBE
|
HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih, |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m
|
Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs
|
H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
|
S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE
|
D. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well
|
M. H. Lee; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Insulator-quantum Hall conductor transitions at low magnetic field
|
C. F. Huang,; Y. H. Chang,; C. H. Lee,; H. D. Yeh,; C.-T. Liang,; Y. F. Chen,; H. H. Lin,; H. H. Cheng,; G. J. Hwang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells
|
C. H. Lee,; Y. H. Chang,; C. F. Huang,; M. Y. Huang,; H. H. Lin,; C. P. Lee,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells
|
G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy
|
J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN |
| 義守大學 |
2017-11 |
The Epidemiology and Characteristics of Q fever and Co-infections with Scrub Typhus, Murine Typhus or Leptospirosis in Taiwan: A Nationwide Database Study
|
C.-H. Lai;W. Sun;C.-H. Lee;J.-N. Lin;M.-H. Liao;S.-S. Liu;T.-Y. Chang;K.-F. Tsai;Y.-C. Chang;H.-H. Lin;Y.-H. Chen |
| 義守大學 |
2016-01 |
Risk of Venous Thromboembolism in Patients With Splenic Injury and Splenectomy. A Nationwide Cohort Study
|
J.-N. Lin;H.-J. Chen;M.-C. Lin;C.-H. Lai;H.-H. Lin;C.-H. Yang;C.-H. Kao |
| 義守大學 |
2014-08 |
Multicentre surveillance of prevalence of the 23S rRNA A2058G and A2059G point mutations and molecular subtypes of Treponema pallidum in Taiwan, 2009–2013
|
B.-R. Wu;C.-J. Yang;M.-S. Tsai;K.-Y. Lee;N.-Y. Lee;W.-C. Huang;H. Wu;C.-H. Lee;T.-C. Chen;W.-C. Ko;H.-H. Lin;P.-L. Lu;Y.-H. Chen;W.-C. Liu;S.-P. Yang;P.-Y. Wu;Y.-C. Su;C.-C. Hung;S.-Y. Chang |
| 義守大學 |
2014-05 |
Association between polymorphisms in the csrRS two-component regulatory system and invasive group A streptococcal infection
|
J.-N. Lin;L.-L. Chang;C.-H. Lai;H.-H. Lin;Y.-H. Chen |
