| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers
|
HAO-HSIUNG LIN; H. H. Lin,; P. W. Liu,; G. H. Liao, |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Temperature dependence of photoreflectance in InAs/GaAs quantum dots
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C. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells
|
T. T. Chen,;C. H. Chen,;W. Z. Cheng,;W. S. Su,;M. H. Ya,;Y. F. Chen,;P. W. Liu,;H. H. Lin,; T. T. Chen,; C. H. Chen,; W. Z. Cheng,; W. S. Su,; M. H. Ya,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers
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L. W. Sung; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
|
F. Y. Chang; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:06Z |
A study of optical properties of InGaAs/GaAs quantum dots
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C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:06Z |
Band Gap Reduction in InAsN Alloys
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D. K. Shih; H. H. Lin; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:06Z |
Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy
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D. K. Shih,; HAO-HSIUNG LIN; H. H. Lin,; J. S. Wang,; G. R. Chen, |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
Raman scattering characterization of InAsN bulk film on (100) InP substrates
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D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
Low-threshold ~1.3m GaAsSb quantum well laser
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P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
1.3m InAs/InGaAs quantum dot lasers grown by GSMBE
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F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
Optical characterization on InAs/GaAs quantum dots
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C. M. Lai,; F. Y. Chang,; C. W. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser
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P.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
Femtosecond carrier dynamics in InGaAsN single quantum well
|
L. W. Sung,; H. H. Lin,; B. R. Wu,; N. T. Yeh,; HAO-HSIUNG LIN; T. M. Liu,; M. C. Tien,; J. W. Shi,; C. K. Sun, |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE
|
L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs
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W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers
|
C. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
On the InAs(N)/InGaAs quantum wells
|
T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well
|
P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
InAsN Grown by Plasma-assisted Gas Source MBE
|
HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih, |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m
|
Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs
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H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
|
S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN |