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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 191-200 of 259  (26 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T04:14:55Z GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:14:55Z Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:14:55Z Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers C. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:04Z On the InAs(N)/InGaAs quantum wells T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:04Z Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:04Z Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:04Z InAsN Grown by Plasma-assisted Gas Source MBE HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih,
臺大學術典藏 2018-09-10T03:50:03Z InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:03Z High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:03Z (AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN

Showing items 191-200 of 259  (26 Page(s) Totally)
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