| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs
|
Y. C. Chin;J. Y. Chen;B. H. Chen;H. S. Tsai;Y. S. Huang;H. H. Lin; Y. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Study on the structural properties of InP0.52Sb0.48 on GaAs
|
C. J. Wu,;G. T. Chen,;Z. C. Feng,;W. M. Chang,;C. C. Yang,;H. H. Lin,; C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy
|
C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy
|
Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
X-ray absorption find structures of InPSb alloys
|
C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells
|
J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
|
F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures
|
Y. W. Tai,; C. C. Yang,; M. H. Yang,; C. S. Hong,; H. H. Lin,; B. Z. Wan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Orentation dependent phase separation in GaAsSb
|
Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Structural properties of (111)B GaAsSb grown on GaAs substrates
|
Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:45:59Z |
Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE
|
K. J. Cheetham,; A. Krier,; I. Patel,; J. S. Tzeng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
Hetero-epitaxy of InAs on patterened Si (100) substrates
|
Y. T. Lin;Y. R. Lin;C. H. Ko;C. H. Wann;H. H. Lin; Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy
|
C. J. Wu,;S. W. Lo,;H. H. Lin,; C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy
|
Y. R. Lan,;C. J. Wu,;H. H. Lin,;L. Y. Chang,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy
|
C. J. Wu,;Y. R. Lan,;L. Y. Chang,;Z. C. Feng,;H. H. Lin,; C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy
|
J. S. Tzeng,;C. J. Wu,;C. J. Hong-Liao,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Optical properties of As-rich InAsSb/InAsPSb multiple quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin; C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Raman scattering in InAsPSb quaternary alloys
|
J. S. Tzeng,;C. J. Wu,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy
|
Y. R. Lan,;C. J. Wu,;H. H. Lin,;T. S. Chan,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
|
J. M. Lin,;L. C. Chou,;H. H. Lin,; J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE
|
T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy
|
H. P. Hsu,;Y. S. Huang,;Y. T. Lin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE
|
T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy
|
Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy
|
S. W. Lo,;C. J. Wu,;H. H. Lin,; S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:48Z |
In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor
|
Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy
|
T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Nitrogen atomic rearrangement in thermally annealed GaAsSbN
|
Y. T. Lin,;T. C. Ma,;H. H. Lin,;J. D. Wu,;Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye
|
H. H. Lin;T. C. Ma;Y. R. Lin;J. P. Wang;C. H. Huang; H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
Photoluminescence of InAsSb/InAsPSb quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells
|
J. M. Lin,;L. C. Chou,;H. H. Lin; J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures
|
H. H. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species
|
Y. T. Lin;T. C. Ma;H. H. Lin; Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:15Z |
InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:15Z |
Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD
|
Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells
|
G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Light emission and detection by metal oxide silicon tunneling diodes
|
C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN
|
T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN
|
Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN
|
S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance
|
J. C. Fan; Y. F. Chen; D. Y. Lin; Y. S. Huang; M. C. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy
|
K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,
|
H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures
|
P. Sitarek,;H. P. Hsu,;Y. S. Huang,;J. M. Lin,;H. H. Lin,;K. K. Tiong,; P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |