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Showing items 76-125 of 259 (6 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:41:15Z	InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy	C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:15Z	Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD	Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells	G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Light emission and detection by metal oxide silicon tunneling diodes	C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN	T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN	Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance	J. C. Fan; Y. F. Chen; D. Y. Lin; Y. S. Huang; M. C. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy	K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer	Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,	H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures	P. Sitarek,;H. P. Hsu,;Y. S. Huang,;J. M. Lin,;H. H. Lin,;K. K. Tiong,; P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:11Z	Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy	J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Band structure of dilute nitride GaAsSbN	Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Photoluminescence study of InAsPSb epilayers grown on GaAs substrates	Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers	Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Origin of the annealing-induced blue-shift in GaAsSbN	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	GaAsSbN/GaAs long wavelength PIN detectors	C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy	H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Band alignment of InAsSb/InAsPSb quantum well	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics	Q. Zhuang,;A. Godenir,;A. Krier, G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Band alignment of InAsSb/InAsPSb quantum wells	C. J. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:00Z	Design and fabrication of AlGaAs ambient light detectors	T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:00Z	Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics	Q. Zhuang,;A. Godenir,;A. Krier,;G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:00Z	Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance	S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:00Z	Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure	Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; S. D. Lin; K. Y. Chen,; HAO-HSIUNG LINet al.
臺大學術典藏	2018-09-10T07:07:59Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:59Z	Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems	Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; J. Y. Wu; S. D. Lin; K. Y. Chen,; CHI-TE LIANG; HAO-HSIUNG LINet al.
臺大學術典藏	2018-09-10T07:07:58Z	Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells	T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:59Z	Narrow Band Gap Semiconductor	H. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T06:34:46Z	Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors	Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Effect of thermal annealing on the optical properties of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Origin of the annealing-induced blue-shift in GaAsSbN bulk layers	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy	C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates	T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m	C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10	I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy	L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy	S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies	T. T. Chen,; C. L. Cheng,; Y. F. Chen,; F. Y. Chang,; H. H. Lin,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T06:34:43Z	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,

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