臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 91-100 of 259 (26 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:41:11Z	Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy	J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Band structure of dilute nitride GaAsSbN	Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Photoluminescence study of InAsPSb epilayers grown on GaAs substrates	Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers	Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Origin of the annealing-induced blue-shift in GaAsSbN	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	GaAsSbN/GaAs long wavelength PIN detectors	C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy	H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Band alignment of InAsSb/InAsPSb quantum well	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN

Showing items 91-100 of 259 (26 Page(s) Totally)
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