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Showing items 11-20 of 35  (4 Page(s) Totally)
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Institution Date Title Author
國立臺灣海洋大學 2012-01 Deposition and structural characterization of nanostructured RuO2 on rutile-TiO2/sapphire(100) templates by reactive radio frequency magnetron sputtering Y.M. Chen; C.N. Yeh; C.A. Chen; Y.S. Huang; H.P. Hsu; D.S. Tsai; K.K. Tiong
國立臺灣海洋大學 2012-01 Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers H. P. Hsu; P. H. Wu; Y. S. Huang; D. Chrastina; G. Isella; H. von Känel; K. K. Tiong
國立臺灣海洋大學 2012-01 Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers P. H. Wu; Y. S. Huang; H. P. Hsu; D. Chrastina; G. Isella; H. von Känel; K. K. Tiong
國立臺灣海洋大學 2012 Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure P. H. Wu;D. Dumcenco;Y. S. Huang;H. P. Hsu;C. H. Lai;T. Y. Lin;D. Chrastina;G. Isella;E. Gatti;K. K. Tiong
國立臺灣海洋大學 2010-12 Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAsGaAs quantum well structures grown by metal organic vapor phase epitaxy C.H. Chan; J.D. Wu; Y. S. Huang; H.P. Hsu; K.K. Tiong; Y.K. Su
國立臺灣海洋大學 2010-11 Optical study of GaAs1−xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy H.P. Hsu; J.K. Huang; Y.S. Huang; Y.T. Lin; H.H. Lin; K.K. Tiong
國立臺灣海洋大學 2010-09 Temperature dependence of energies and broadening parameters of near band-edge interband excitonic transitions in wurtzite ZnCdMgSe D. O. Dumcenco; Y. S. Huang; H. P. Hsu; K. K. Tiong; F. Firszt; K. Strzałkowski; S.Łęgowski; H. Męczyńska
國立臺灣海洋大學 2009-05-05 Evidence of type-II band alignment at the ordered GaInNP to GaAs heterointerface H. P. Hsu; Y. N. Huang; Y. S. Huang; P. Sitarek; K. K. Tiong; C. W. Tu
國立臺灣海洋大學 2009 Optical studies of type I GaAs1 xSbx/GaAs multiple quantum well structures P. Sitarek; H.P. Hsu; Y.S. Huang; J.M. Lin; H.H. Lin; K.K. Tiong
國立臺灣海洋大學 2009 Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy H. P. Hsu; Y. N. Huang; Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; K. K. Tiong; P. Sitarek; J. Misiewicz

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