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Showing items 1-10 of 10 (1 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
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Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Brammertz, G.;Wang, W.-E.;Hong, M.;Kwo, J.;Dekoster, Caymax, M.;Meuris, M.;Heyns, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Brammertz, G.; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster, Caymax, M.; Meuris, M.; Heyns, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing
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Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Wang, W.-E.;Dekoster, J.;Meuris, M.;Caymax, M.;Heyns, M.;Kwo, J.;Hong, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Low interfacial density of states around midgap in MBE-Ga2O 3(Gd2O3)/In0.2Ga0.8As
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Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Chang, Y.C.;Lin, T.D.;Kwo, J.;Wang, W.-E.;Dekoster, J.;Heyns, M.;Hong, M.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.;Chang, Y.C.;Lu, C.Y.;Penaud, J.;Brammertz, G.;Scarrozza, M.;Pourtois, G.;Kwo, J.;Hong, M.;Dekoster, J.;Meuris, M.;Heyns, M.;Caymax, M.; Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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Chu, L.K.;Merckling, C.;Alian, A.;Dekoster, J.;Kwo, J.;Hong, M.;Caymax, M.;Heyns, M.; Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Metal oxide semiconductor device studies of molecular-beam-deposited Al 2O 3/InP heterostructures with various surface orientations (001), (110), and (111)
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Chu, L.-K.; Merckling, C.; Dekoster, J.; Kwo, J.R.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
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Lin, CA;Chiu, HC;Chiang, TH;Chang, YC;Lin, TD;Kwo, J;Wang, W-E;Dekoster, J;Heyns, M;Hong, M; Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing
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Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:26:43Z |
Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
Showing items 1-10 of 10 (1 Page(s) Totally)
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