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| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001),(110), and (111)
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Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei; Caymax, Matty; Heyns, Marc; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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Chu, LK;Merckling, C;Alian, A;Dekoster, J;Kwo, J;Hong, M;Caymax, M;Heyns, Marc; Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG |
| 國立臺灣大學 |
2012 |
Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
|
Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei; Caymax, Matty; Heyns, Marc |
| 臺大學術典藏 |
2012 |
Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
|
Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei; Caymax, Matty; Heyns, Marc; Chu, Lung-Kun; Merckling, Clement; Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei; Caymax, Matty; Heyns, Marc |
Showing items 1-4 of 4 (1 Page(s) Totally)
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