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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:16:17Z |
Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs
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Lin, YC; Chang, EY; Yamaguchi, H; Hirayama, Y; Chang, XY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:15:41Z |
Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)
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Lin, Y. C.; Chang, Edward Yi; Yamaguchi, H.; Hirayama, Y.; Chang, X. Y.; Chang, C. Y. |
| 國立交通大學 |
2014-12-08T15:14:57Z |
Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications
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Lin, Y. C.; Yamaguchi, H.; Chang, E. Y.; Hsieh, Y. C.; Ueki, M.; Hirayama, Y.; Chang, C. Y. |
Showing items 1-3 of 3 (1 Page(s) Totally)
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