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"hobson ws"的相關文件
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| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs
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Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide
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Hong, M; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide
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Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION
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Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions
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Passlack, M; Hong, M; Schubert, EF; Zydzik, GJ; Mannaerts, JP; Hobson, WS; Harris, TD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
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Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
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Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
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Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
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Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
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Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
1997 |
Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
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Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG |
| 臺大學術典藏 |
1997 |
Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs
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Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG; Tsai, HS; Hobson, WS; Kuo, JM; Hong, M; Ren, F |
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