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| 國立成功大學 |
2009-05-07 |
Origins of flash lamp annealing induced p-n junction leakages in a 45 nm p-MOSFET with strained SiGe source/drain
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Cheng, C. Y.; Fang, Yean-Kuen; Hsieh, J. C.; Hsia, H.; Lin, S. S.; Hou, C. S.; Ku, K. C.; Sheu, Y. M. |
| 國立成功大學 |
2008-03-31 |
Impact of the strained SiGe source/drain on hot carrier reliability for 45 nm p-type metal-oxide-semiconductor field-effect transistors
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Cheng, C. Y.; Fang, Yean-Kuen; Hsieh, J. C.; Hsia, H.; Chen, W. M.; Lin, S. S.; Hou, C. S. |
| 國立成功大學 |
2007-05 |
Investigation and localization.of the SiGe source/drain (S/D) strain-induced defects in PMOSFET with 45-nm CMOS technology
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Cheng, C. Y.; Fang, Yean-Kuen; Hsieh, J. C.; Hsia, H.; Sheu, Y. M.; Lu, W. T.; Chen, W. M.; Lin, S. S. |
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