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Showing items 1-20 of 20 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:36Z |
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy
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Wang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:38:32Z |
Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealing
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Chen, JF; Hsiao, RS; Shih, SH; Wang, PY; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:37:23Z |
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m
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Wang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM |
| 國立交通大學 |
2014-12-08T15:37:14Z |
Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy
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Hsiao, RS; Wang, JS; Lin, KF; Wei, L; Liu, HY; Liang, CY; Lai, CM; Kovsh, AR; Maleev, NA; Chi, JY; Chen, JF |
| 國立交通大學 |
2014-12-08T15:19:20Z |
Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy
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Chang, KP; Yang, SL; Chuu, DS; Hsiao, RS; Chen, JF; Wei, L; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:19:19Z |
High-performance 30-period quantum-dot infrared photodetector
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Chou, ST; Lin, SY; Hsiao, RS; Chi, JY; Wang, JS; Wu, MC; Chen, JF |
| 國立交通大學 |
2014-12-08T15:18:47Z |
Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs
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Chen, JF; Hsiao, RS; Wang, CK; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dots
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Chen, JF; Hsiao, RS; Chen, YC; Chen, YP; Hsieh, MT; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
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Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:17Z |
Thickness dependence of current conduction and carrier distribution of GaAsN grown on GaAs
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Chen, JF; Hsiao, RS; Hsieh, MT; Huang, WD; Guo, PS; Lee, WI; Lee, SC; Lee, CL |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling
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Chen, JF; Hsiao, RS; Chen, YP; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
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Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:54Z |
N incorporation into InGaAs cap layer in InAs self-assembled quantum dots
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Chen, JF; Hsiao, RS; Hsieh, PC; Chen, YJ; Chen, YP; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:54Z |
Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers
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Wang, JS; Lin, G; Hsiao, RS; Yang, CS; Lai, CM; Liang, CY; Liu, HY; Chen, TT; Chen, YF; Chi, JY; Chen, JF |
| 國立交通大學 |
2014-12-08T15:17:44Z |
Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots
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Chen, JF; Hsiao, RS; Hsieh, MF; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time
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Chen, JF; Hsiao, RS; Hung, WK; Wang, JS; Chi, JY; Yu, HC; Su, YK |
| 國立交通大學 |
2014-12-08T15:17:16Z |
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
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Chang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC |
| 國立交通大學 |
2014-12-08T15:16:35Z |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy
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Lai, FI; Kuo, SY; Wang, JS; Hsiao, RS; Kuo, HC; Chi, J; Wang, SC; Wang, HS; Liang, CT; Chen, YF |
| 國立交通大學 |
2014-12-08T15:16:22Z |
Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells
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Chen, JF; Hsiao, RS; Hsieh, PC; Wang, JS; Chi, JY |
Showing items 1-20 of 20 (1 Page(s) Totally)
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