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Showing items 11-20 of 20 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:18:12Z |
Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling
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Chen, JF; Hsiao, RS; Chen, YP; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
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Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:54Z |
N incorporation into InGaAs cap layer in InAs self-assembled quantum dots
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Chen, JF; Hsiao, RS; Hsieh, PC; Chen, YJ; Chen, YP; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:54Z |
Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers
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Wang, JS; Lin, G; Hsiao, RS; Yang, CS; Lai, CM; Liang, CY; Liu, HY; Chen, TT; Chen, YF; Chi, JY; Chen, JF |
| 國立交通大學 |
2014-12-08T15:17:44Z |
Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots
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Chen, JF; Hsiao, RS; Hsieh, MF; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time
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Chen, JF; Hsiao, RS; Hung, WK; Wang, JS; Chi, JY; Yu, HC; Su, YK |
| 國立交通大學 |
2014-12-08T15:17:16Z |
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
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Chang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC |
| 國立交通大學 |
2014-12-08T15:16:35Z |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy
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Lai, FI; Kuo, SY; Wang, JS; Hsiao, RS; Kuo, HC; Chi, J; Wang, SC; Wang, HS; Liang, CT; Chen, YF |
| 國立交通大學 |
2014-12-08T15:16:22Z |
Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells
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Chen, JF; Hsiao, RS; Hsieh, PC; Wang, JS; Chi, JY |
Showing items 11-20 of 20 (1 Page(s) Totally)
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