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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-16T06:15:34Z |
Method for forming required pattern on semiconductor substrate by thermal reflow technique
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Chang, Yi Edward; Chang, Chia-Ta; Hsiao, Shih-Kuang |
| 國立交通大學 |
2014-12-08T15:09:52Z |
Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
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Chang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Lu, Chung-Yu; Huang, Jui-Chien; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:08:37Z |
460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
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Chang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Hsiao, Yu-Lin; Huang, Jui-Chien; Lu, Chung-Yu; Chang, Huang-Choung; Cheng, Kai-Wen; Lee, Ching-Ting |
| 國立成功大學 |
2009-10-01 |
460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
|
Chang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Hsiao, Yu-Lin; Huang, Jui-Chien; Lu, Chung-Yu; Chang, Huang-Choung; Cheng, Kai-Wen; Lee, Ching-Ting |
| 國立成功大學 |
2009-03 |
Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
|
Chang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Lu, Chung-Yu; Huang, Jui-Chien; Lee, Ching-Ting |
Showing items 1-5 of 5 (1 Page(s) Totally)
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