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"hsieh e r"的相關文件
顯示項目 31-42 / 42 (共1頁)
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| 國立交通大學 |
2014-12-08T15:45:53Z |
More Strain and Less Stress- The Guideline for Developing High-End Strained CMOS Technologies with Acceptable Reliability
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Chung, Steve S.; Hsieh, E. R.; Huang, D. C.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:39:25Z |
The Understanding of Strain-Induced Device Degradation in Advanced MOSFETs with Process-Induced Strain Technology of 65nm Node and Beyond
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Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:36:22Z |
The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors
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Hsieh, E. R.; Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:32:43Z |
The Understanding of the Bulk Trigate MOSFET's Reliability Through the Manipulation of RTN Traps
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Hsieh, E. R.; Wu, P. C.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T. |
| 國立交通大學 |
2014-12-08T15:30:46Z |
The Understanding of Multi-level RTN in Trigate MOSFETs Through the 2D Profiling of Traps and Its Impact on SRAM Performance: A New Failure Mechanism Found
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Hsieh, E. R.; Tsai, Y. L.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T. |
| 國立交通大學 |
2014-12-08T15:28:53Z |
The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors
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Hsieh, E. R.; Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:28:02Z |
Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications
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Yang, C. L.; Tsai, C. H.; Li, C. I.; Tzeng, C. Y.; Lin, G. P.; Chen, W. J.; Chin, Y. L.; Liao, C. I.; Chan, M.; Wu, J. Y.; Hsieh, E. R.; Guo, B. N.; Lu, S.; Colombeau, B.; Chung, S. S.; Chen, I. C. |
| 國立交通大學 |
2014-12-08T15:22:00Z |
A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise Measurement
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Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:21:56Z |
Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)
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Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:21:21Z |
A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic Regime
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Hsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:20:29Z |
New Observations on the Physical Mechanism of Vth-Variation in Nanoscale CMOS Devices After Long Term Stress
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Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W. |
| 國立交通大學 |
2014-12-08T15:07:17Z |
The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors
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Hsieh, E. R.; Chung, Steve S. |
顯示項目 31-42 / 42 (共1頁)
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