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Showing items 1-17 of 17 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:30Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
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Wang, CC; Ku, TK; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Growth of MgWO4 phosphor by RF magnetron sputtering
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Chu, JP; Hsieh, IJ; Chen, JT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:59Z |
The strong degradation of 30 angstrom gate oxide integrity contaminated by copper
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Lin, YH; Chen, YC; Chan, KT; Pan, FM; Hsieh, IJ; Chin, A |
| 國立交通大學 |
2014-12-08T15:43:18Z |
Cu contamination effect in oxynitride gate dielectrics
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Lin, YH; Pan, FM; Liao, YC; Chen, YC; Hsieh, IJ; Chin, A |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu m
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Ku, TK; Hsieh, BB; Chen, MS; Wang, CC; Wang, PW; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
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Wang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:38Z |
Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.
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Ku, TK; Chen, SH; Yang, CD; She, NJ; Tarntair, FG; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
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Chin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:03:57Z |
GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING
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HSIEH, IJ; FENG, MS; KUO, KT; LIN, P |
| 國立交通大學 |
2014-12-08T15:03:46Z |
CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING
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HSIEH, IJ; CHU, KT; YU, CF; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:37Z |
A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
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WANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:09Z |
SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES
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KU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Fabrication and characterization of diamond-clad silicon field emitter arrays
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Cheng, HC; Ku, TK; Hsieh, BB; Chen, SH; Leu, SY; Wang, CC; Chen, CF; Hsieh, IJ; Huang, JCM |
| 國立交通大學 |
2014-12-08T15:02:58Z |
Characterization and fabrication of chimney-shaped metal field emitters
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Cheng, HC; Wang, CC; Ku, TK; Hsieh, IJ |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays
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Ku, TK; Chen, SH; Yang, CD; She, NJ; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:37Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
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Wang, CC; Ku, TK; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:11Z |
Enhanced electron emission from phosphorous- and boron-doped diamond-clad Si field emitter arrays
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Ku, TK; Chen, SH; Yang, CD; She, NJ; Tarntair, FG; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC |
Showing items 1-17 of 17 (1 Page(s) Totally)
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