|
English
|
正體中文
|
简体中文
|
2826152
|
|
???header.visitor??? :
31796156
???header.onlineuser??? :
1077
???header.sponsordeclaration???
|
|
|
|
???tair.name??? >
???browser.page.title.author???
|
"hsieh lz"???jsp.browse.items-by-author.description???
Showing items 1-4 of 4 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T05:59:22Z |
The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy
|
Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY |
| 國立交通大學 |
2014-12-08T15:49:15Z |
Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy
|
Hsieh, LZ; Huang, JH; Su, ZA; Wu, MC |
| 國立交通大學 |
2014-12-08T15:49:09Z |
Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy
|
Su, ZA; Huang, JH; Hsieh, LZ; Lee, WI |
| 國立交通大學 |
2014-12-08T15:01:20Z |
The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy
|
Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY |
Showing items 1-4 of 4 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
