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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-12T01:25:11Z |
(In)GaAsN/GaAs量子井中N相關之局部侷限能階的形成機制與電性量測分析
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謝孟謙; Hsieh, Meng-Chien; 陳振芳; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:22:53Z |
Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance
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Hsieh, Meng-Chien; Wang, Jia-Feng; Wang, Yu-Shou; Yang, Cheng-Hong; Chiang, Chen-Hao; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:21:43Z |
Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots
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Chiang, Chen-Hao; Chang, You-Cheng; Wu, Yue-Han; Hsieh, Meng-Chien; Yang, Cheng-Hong; Wang, Jia-Feng; Chang, Li; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:21:13Z |
Role of the N-related localized states in the electron emission properties of a GaAsN quantum well
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Hsieh, Meng-Chien; Wang, Jia-Feng; Wang, Yu-Shou; Yang, Cheng-Hong; Chen, Ross C. C.; Chiang, Chen-Hao; Chen, Yung-Fu; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:21:01Z |
Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
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Yang, Cheng-Hong; Hsieh, Meng-Chien; Wu, Chia-Wei; Chang, Yen-Ting; Wu, Yue-Han; Chang, Li; Chen, Jenn-Fang |
Showing items 1-5 of 5 (1 Page(s) Totally)
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