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"hsieh shang hsun"
Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:44:26Z |
A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers
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Hsieh, Shang-Hsun; Chen, Ming-Jer |
| 國立交通大學 |
2018-01-24T07:39:01Z |
高介電金屬閘極短通道場效電晶體之長距庫倫效應、電中性缺陷散射及遠程偶極散射
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謝尚勳; 陳明哲; Hsieh, Shang-Hsun; Chen, Ming-Jer |
| 國立交通大學 |
2017-04-21T06:49:26Z |
A New Microscopic Formalism for the Electron Scattering by Remote "Paired" Dipoles in HKMG MOSFETs
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Hsieh, Shang-Hsun; Hung, Jo-Chun; Chen, Ming-Jer |
| 國立交通大學 |
2017-04-21T06:48:46Z |
Two Competing Limiters in MOSFETs Scaling: Neutral Defects and S/D Plasmons
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Hsieh, Shang-Hsun; Hung, Jo-Chun; Weng, Heng-Jui; Tsai, Ming-Fu; Chiang, Chih-Chi; Chen, Ming-Jer |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Plasmon-enhanced phonon and ionized impurity scattering in doped silicon
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Chen, Ming-Jer; Hsieh, Shang-Hsun; Chen, Chuan-Li |
| 國立交通大學 |
2015-07-21T08:28:29Z |
Criteria for Plasmon-Enhanced Electron Drag in Si Metal-Oxide-Semiconductor Devices
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Chen, Ming-Jer; Hsieh, Shang-Hsun; Liao, Yu-Chiao; Chen, Chuan-Li; Tsai, Ming-Fu |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon
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Chen, Ming-Jer; Chen, Chuan-Li; Hsieh, Shang-Hsun; Chang, Li-Ming |
| 國立交通大學 |
2014-12-08T15:22:44Z |
Temperature-Oriented Mobility Measurement and Simulation to Assess Surface Roughness in Ultrathin-Gate-Oxide (similar to 1 nm) nMOSFETs and Its TEM Evidence
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Chen, Ming-Jer; Chang, Li-Ming; Kuang, Shin-Jiun; Lee, Chih-Wei; Hsieh, Shang-Hsun; Wang, Chi-An; Chang, Sou-Chi; Lee, Chien-Chih |
Showing items 1-8 of 8 (1 Page(s) Totally)
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