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"hsieh ting en"的相關文件
顯示項目 1-18 / 18 (共1頁)
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| 國立交通大學 |
2019-04-03T06:36:34Z |
Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
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Chou, Po-Chien; Chen, Szu-Hao; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesus A.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
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Tsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2019-04-02T05:59:46Z |
High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device Applications
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Wang, Huan-Chung; Lumbantoruan, Franky Juanda; Hsieh, Ting-En; Wu, Chia-Hsun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:35Z |
Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation
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Wu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Bias- and Temperature-Assisted Trapping/De-trapping of R-ON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate
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Zhang, Jin-Ming; Hsieh, Ting-En; Wu, Tian-Li; Chen, Szu-Hao; Chen, Shi-Xuan; Chou, Po-Chien; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:49Z |
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
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Wu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications
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Chou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesus A.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
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Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-06-21 |
Halbleitervorrichtung und Verfahren zur Herstellung derselben
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Hsieh, Ting-En; Lin, Yueh-Chin; Han, Ping-Cheng; Wu, Chia-Hsun; Huang, Chung-Kai; Liu, Shih-Chien; Chang, Edward Yi; HSIEH TING-EN; LIN YUEH-CHIN; HAN PING-CHENG; WU CHIA-HSUN; HUANG CHUNG-KAI; LIU SHIH-CHIEN; CHANG EDWARD YI |
| 國立交通大學 |
2017-04-21T06:55:56Z |
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
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Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:23Z |
The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates
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Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi |
| 國立交通大學 |
2015-12-02T02:59:34Z |
GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
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Hsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi |
| 國立交通大學 |
2015-12-02T02:59:28Z |
Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications
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Hsieh, Ting-En; Lin, Yueh-Chin; Liao, Jen-Ting; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi |
| 國立交通大學 |
2015-11-26T01:02:55Z |
高功率電子應用之氮化鎵半導體於矽基板的元件製作與特性研究
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謝廷恩; Hsieh, Ting-En; 張翼; Chang, Edward-Yi |
| 國立交通大學 |
2014-12-08T15:36:57Z |
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
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Liu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
|
Tsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi |
顯示項目 1-18 / 18 (共1頁)
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